Alonzo D Lafleur

Title: Alonzo D Lafleur: Innovator in Process Control Technology

Introduction

Alonzo D Lafleur is a notable inventor based in Baton Rouge, Louisiana. He has made significant contributions to the field of process control technology, particularly through his innovative methods for managing the addition of materials in various processes. His work is characterized by a focus on precision and efficiency, which has implications for industries that rely on controlled processes.

Latest Patents

Lafleur holds a patent for a method of controlling the amount of seed material in precipitation. This patent describes a technique for sampling and controlling the addition of suspended gases, liquids, and solids in a control stream to a process stream. The method utilizes the surface area of the suspended material as a key factor for controlling the process. By comparing the measured surface area with a preselected value, Lafleur's method allows for precise control over the addition of particulate seed material, particularly in the Bayer process for alumina production. This innovative approach is also applicable to various physical and chemical control means in analytical schemes.

Career Highlights

Alonzo D Lafleur has built a career centered around innovation in process control. His work at Ormet Corporation has allowed him to apply his inventive ideas in practical settings, contributing to advancements in the industry. His patent reflects his commitment to improving process efficiency and control.

Collaborations

Lafleur has collaborated with notable colleagues, including Robert E Baugh and John T Creehan. These partnerships have likely enriched his work and contributed to the development of effective solutions in process control.

Conclusion

Alonzo D Lafleur's contributions to process control technology exemplify the impact of innovative thinking in industrial applications. His patent demonstrates a significant advancement in managing materials in processes, showcasing his role as a key inventor in this field.