Company Filing History:
Years Active: 1977-1979
Title: Alois Goppinger: Innovator in Silicon Deposition Processes
Introduction
Alois Goppinger is a notable inventor based in Burghausen, Germany. He has made significant contributions to the field of silicon deposition, holding 2 patents that showcase his innovative approaches.
Latest Patents
Goppinger's latest patents include a process for the deposition of polycrystalline silicon from the gas phase. This process involves assembling carrier bodies from extremely thin flexible graphite foils, heating them to the deposition temperature, and contacting them with a gaseous mixture containing a decomposable silicon compound. The deposited silicon can be utilized in laboratory equipment or the semiconductor industries. Another patent focuses on making hollow silicon bodies by decomposing a gaseous compound containing silicon. This process allows for the immediate use of the hollow silicon bodies in semiconductor applications.
Career Highlights
Alois Goppinger works at Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, where he continues to develop innovative solutions in silicon technology. His work has positioned him as a key figure in the advancement of semiconductor materials.
Collaborations
Goppinger has collaborated with notable coworkers such as Rudolf Griesshammer and Franz Koppl, contributing to the development of cutting-edge technologies in his field.
Conclusion
Alois Goppinger's contributions to silicon deposition processes highlight his role as an influential inventor in the semiconductor industry. His innovative patents continue to impact the field significantly.