Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh

Alois Goppinger

Franz Koppl

Rudolf Griesshammer

Helmut Hamster

Josef Thalmeier

A process for deposition of polycrystalline silicon from the gas phase on ated carrier bodies of carbon, which comprises assembling the carrier bodies from extremely thin flexible graphite foils, heating the bodies to deposition temperature, while contacting them with a gaseous mixture containing a decomposable silicon compound and, if desired, hydrogen, and separating the deposited silicon from the carrier body, after termination of the deposition process, by mechanical means. The polycrystalline silicon can either be deposited in the form of shaped hollow bodies for use as laboratory equipment or in the semiconductor industries, or it may be processed to monocrystalline materials.

Process for the deposition of polycrystalline silicon from the gas phase

A process for making hollow silicon bodies by decomposition from a gaseous ompound containing silicon and depositing said silicon on heated carrier bodies, which comprises assembling in a decomposition device a number of board-shaped members of silicon to form a hollow carrier body, heating said body to the decomposition temperature of the gaseous compound, introducing the gas into the device whereby it is thermally decomposed, causing the silicon released thereby to become inseparately united with the hollow carrier body, the hollow silicon body so formed being immediately available for use in the semiconductor industries. The invention also comprises the silicon bodies so made.

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Burghausen, Germany

Alois Goppinger