Marktl, Germany

Alois Aigner


Average Co-Inventor Count = 2.6

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2002-2019

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3 patents (USPTO):Explore Patents

Title: Innovations of Alois Aigner

Introduction

Alois Aigner is a notable inventor based in Marktl, Germany. He has made significant contributions to the field of semiconductor technology, holding a total of three patents. His work primarily focuses on methods and apparatuses for depositing material layers on substrate wafers.

Latest Patents

Alois Aigner's latest patents include a method and apparatus for depositing a material layer originating from process gas on a substrate wafer. This apparatus is designed to facilitate the deposition of layers on semiconductor wafers using chemical vapor deposition (CVD). The method involves a chamber with an inlet and outlet opening, where a semiconductor wafer is positioned to optimize the deposition process. The design ensures that the distance between the wafer and the window varies, allowing for controlled gas flow and deposition speed across the wafer surface.

Career Highlights

Throughout his career, Alois Aigner has worked with various companies, including Siltronic AG. His expertise in semiconductor technology has positioned him as a key figure in the industry, contributing to advancements in material deposition techniques.

Collaborations

Alois Aigner has collaborated with notable professionals in his field, including Georg Brenninger and Christian Hager. These collaborations have further enhanced his work and contributions to semiconductor technology.

Conclusion

Alois Aigner's innovations in semiconductor technology and his patents reflect his dedication to advancing the field. His work continues to influence the industry and pave the way for future developments in material deposition techniques.

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