Siltronic Ag

Other

Alois Aigner

Georg Brenninger

Christian Hager

Herbert Mittermaier

An apparatus for depositing a material layer originating from process gas on a substrate wafer, contains:

Method and apparatus for depositing a material layer originating from process gas on a substrate wafer

A method for depositing a layer on a semiconductor wafer using chemical vapor deposition (CVD). The method includes providing a chamber having an inlet opening and an outlet opening and a channel joining the inlet opening and the outlet opening, wherein the channel is bounded at the bottom by a plane and at the top by a window transmissive to thermal radiation. A semiconductor wafer is disposed so that a surface of the semiconductor lies in the plane, wherein the window has a center region disposed over the semiconductor wafer and an edge region surrounding the center region and not disposed over the semiconductor wafer. A distance between the plane and the window varies across the chamber, the distance being greater at the edge region than at the center region. A tangent applied to a radial profile of the distance at a boundary between the center region and the edge region forms an angle with the plane of not less than 15&#xb0; and not more than 25&#xb0;. A deposition gas is conducted through the channel from the gas inlet opening over the semiconductor wafer to the gas outlet opening, wherein a speed at which the deposition gas is conducted varies over the semiconductor wafer according to the varying distance between the plane and the window.

Method for depositing a layer on a semiconductor wafer by means of CVD and chamber for carrying out the method

A method is provided for loading a heated susceptor or a susceptor segment of a deposition reactor with a substrate wafer which is resting on a holding means. Before making contact between the substrate wafer and the susceptor or susceptor segment, a holding position is reached in which the substrate wafer and the susceptor or susceptor segment are at a spaced vertical distance from one another. The substrate wafer is only brought into contact with the susceptor or the susceptor segment after a residence time in this holding position. There is also a device for loading a susceptor, in particular a susceptor segment of a deposition reactor.

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Marktl, Germany

Alois Aigner