Woodbine, MD, United States of America

Alma E Wickenden


Average Co-Inventor Count = 6.2

ph-index = 1

Forward Citations = 27(Granted Patents)


Company Filing History:


Years Active: 2001-2008

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3 patents (USPTO):Explore Patents

Title: Alma E. Wickenden: Innovator in Semiconductor Technology

Introduction

Alma E. Wickenden, based in Woodbine, MD, is a prominent inventor recognized for her significant contributions to the field of semiconductor technology. With a total of three patents to her name, she exemplifies the innovative spirit that drives electronic and optoelectronic advancements.

Latest Patents

Wickenden's latest invention focuses on a "Technique for Perfecting the Active Regions of Wide Bandgap Semiconductor Nitride Devices." This groundbreaking invention addresses the challenge of reducing extended defects in electronic and optoelectronic devices. The methodology involves a systematic process that includes depositing a dielectric thin film mask material on a semiconductor substrate surface, patterning the mask to create openings that extend to the substrate, and subsequently growing the active material within these openings. After removing the mask, the device is formed with a notably reduced extended defect density, followed by the deposition of electrical contacts. This innovation enhances the performance of semiconductor devices significantly.

Career Highlights

Wickenden has made remarkable strides in her career, working for the United States of America, as represented by the Secretary of the Navy. Her role has allowed her to push the boundaries of semiconductor research and development, contributing to technologies essential for various applications in electronics.

Collaborations

Throughout her career, Wickenden has collaborated with esteemed colleagues, including Daniel D. Koleske and Richard L. Henry. These partnerships have facilitated the exchange of ideas and advancements in semiconductor technologies, further establishing her reputation in the field.

Conclusion

Alma E. Wickenden stands out as a visionary inventor in the semiconductor domain. Her work in perfecting the active regions of wide bandgap semiconductor nitride devices is a testament to her dedication to innovation and excellence. As her inventions continue to influence the future of electronic and optoelectronic devices, she remains a pivotal figure in the growth of semiconductor technology.

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