The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2008
Filed:
Aug. 02, 2006
Richard L Henry, Great Falls, VA (US);
Martin C Peckerar, Silver Spring, MD (US);
Daniel D Koleske, Albuquerque, NM (US);
Alma E Wickenden, Woodbine, MD (US);
Charles R Eddy, Jr., Columbia, MD (US);
Ronald T Holm, Alexandria, VA (US);
Mark E Twigg, Falls Church, VA (US);
Richard L Henry, Great Falls, VA (US);
Martin C Peckerar, Silver Spring, MD (US);
Daniel D Koleske, Albuquerque, NM (US);
Alma E Wickenden, Woodbine, MD (US);
Charles R Eddy, Jr., Columbia, MD (US);
Ronald T Holm, Alexandria, VA (US);
Mark E Twigg, Falls Church, VA (US);
The United States of America as represented by The Secretary of the Navy, Washington, DC (US);
Abstract
This invention pertains to electronic/optoelectronic devices with reduced extended defects and to a method for making it. The device includes a substrate, a semiconductor active material deposited on said substrate, and electrical contacts. The semiconductor active material defines raised structures having atomically smooth surfaces. The method includes the steps of depositing a dielectric thin film mask material on a semiconductor substrate surface; patterning the mask material to form openings therein extending to the substrate surface; growing active material in the openings; removing the mask material to form the device with reduced extended defect density; and depositing electrical contacts on the device.