Reisterstown, MD, United States of America

Allen C Keeney

This inventor holds 1 USPTO granted patent. Top assignee: Johns Hopkins University. Active years: 2005.


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2005

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1 patent (USPTO):Explore Patents

Title: Allen C Keeney: Innovator in Ion Deflection Technology

Introduction

Allen C Keeney is a notable inventor based in Reisterstown, MD (US). He has made significant contributions to the field of ion deflection technology. His innovative work has led to the development of a unique gating grid that enhances the efficiency of ion manipulation.

Latest Patents

Keeney holds a patent for a "Gating grid and method of making same." This invention features a gating grid designed for deflecting ions, which includes an insulating substrate, a conducting layer adhered to the insulating substrate, and interdigitated electrodes patterned in the conducting layer through a photolithographic process. A hole in the insulating substrate beneath the interdigitated electrodes allows ions to pass through, facilitating their deflection. This patent showcases Keeney's expertise in creating advanced materials for ion manipulation, with a total of 1 patent to his name.

Career Highlights

Keeney is affiliated with Johns Hopkins University, where he continues to contribute to research and innovation in his field. His work is characterized by a commitment to advancing technology and improving methodologies related to ion deflection.

Collaborations

Throughout his career, Keeney has collaborated with esteemed colleagues, including Harry K Charles, Jr and Arthur S Francomacaro. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Allen C Keeney's contributions to ion deflection technology exemplify his dedication to innovation and research. His patent and collaborations reflect a commitment to advancing scientific understanding and technological capabilities.

Profile summary based on public USPTO records.
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