Plymouth, MN, United States of America

Allan T Hurst


Average Co-Inventor Count = 3.0

ph-index = 3

Forward Citations = 42(Granted Patents)


Location History:

  • Anoka, MN (US) (2003)
  • Plymouth, MN (US) (2006 - 2010)

Company Filing History:


Years Active: 2003-2010

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5 patents (USPTO):Explore Patents

Title: Allan T Hurst: Innovator in Non-Volatile Memory Technology

Introduction

Allan T Hurst, an accomplished inventor based in Plymouth, MN, has made significant contributions to the field of non-volatile memory technology. With a total of five patents to his name, Hurst is recognized for his innovative approach in the semiconductor industry. His work aims to address the increasing demand for advanced memory solutions that are not only efficient but also reliable in data retention.

Latest Patents

Among his latest patents is the groundbreaking development of Double Density MRAM with Planar Processing. This invention addresses the semiconductor industry's challenge of replacing traditional volatile memory devices with improved non-volatile alternatives. The advancements described in this patent involve innovative fabrication techniques for magnetic memory structures configured in high density. The focus lies on creating an efficient means to program these dense magnetic memory structures, setting a new standard in non-volatile memory devices.

Career Highlights

Throughout his career, Allan T Hurst has held positions in prominent companies such as Micron Technology Incorporated and Honeywell International Inc. His tenure at these organizations has been instrumental in refining his expertise in memory technology and semiconductor solutions.

Collaborations

Hurst has collaborated with various talented individuals in the field, including Jeffrey Sather and Jason Bryce Gadbois. These partnerships have contributed to the success of his innovative projects and have played a crucial role in advancing the technology behind non-volatile memory.

Conclusion

Allan T Hurst's contributions to non-volatile memory technology exemplify his dedication to innovation and advancement in the semiconductor industry. With multiple patents under his name, he continues to influence the development of efficient memory solutions that meet the demands of modern technology. His work not only enhances the capabilities of memory devices but also sets the groundwork for future innovations in this critical field.

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