Winooski, VT, United States of America

Alissa R Cote

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Globalfoundries Inc.. Active years: 2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Alissa R Cote. Retrieved from https://idiyas.com/inventor/alissa-r-cote

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2016

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1 patent (USPTO):Explore Patents

Title: Alissa R Cote: Innovator in Self-Healing Technologies

Introduction

Alissa R Cote is a notable inventor based in Winooski, Vermont. She has made significant contributions to the field of integrated circuit technology. Her innovative work focuses on self-healing materials that enhance the durability and reliability of electronic devices.

Latest Patents

Alissa holds a patent for a "Self-healing crack stop structure." This invention involves a crack stop structure formed within dielectric layers surrounding an active region of an integrated circuit chip. The unique feature of this structure is its self-healing material, which is designed to seal cracks upon their propagation, thereby preventing further damage.

Career Highlights

Alissa is currently employed at GlobalFoundries Inc., a leading semiconductor manufacturer. Her work at the company emphasizes the development of advanced materials and technologies that improve the performance of integrated circuits.

Collaborations

Alissa has collaborated with notable colleagues, including Stephen Peter Ayotte and Kendra A Lyons. These partnerships have contributed to her innovative projects and the advancement of technology in her field.

Conclusion

Alissa R Cote's contributions to self-healing technologies represent a significant advancement in integrated circuit design. Her innovative patent showcases her commitment to enhancing the reliability of electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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