San Jose, CA, United States of America

Ali Ghalam

This inventor holds 2 USPTO granted patents. Top assignee: Intel Corporation. Active years: 2013-2016.


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 2

Forward Citations = 25(Granted Patents)


Company Filing History:


Years Active: 2013-2016

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2 patents (USPTO):Explore Patents

Title: The Innovations of Ali Ghalam

Introduction

Ali Ghalam is an accomplished inventor based in San Jose, CA. He has made significant contributions to the field of memory technology, holding 2 patents that showcase his innovative approach to enhancing memory device operations. Ghalam's work primarily focuses on improving power consumption and addressing memory arrays in non-volatile memory systems.

Latest Patents

Ghalam's latest patents include a method for auto-suspend and auto-resume operations for a multi-die NAND memory device. This invention aims to reduce peak power consumption by controlling high-current memory operations. The method allows a die in a multi-die memory to enter a suspended-operation mode when a high-current operation is detected, resuming once the operation is complete. His second patent relates to addressing memory arrays, which involves a configuration of memory modules that can be addressed with a single chip enable signal, streamlining the operation of non-volatile memory arrays.

Career Highlights

Ali Ghalam is currently employed at Intel Corporation, where he continues to push the boundaries of memory technology. His work has been instrumental in developing more efficient memory devices that cater to the growing demands of modern computing.

Collaborations

Ghalam collaborates with talented individuals such as Dean K Nobunaga and Jason Guo, contributing to a dynamic team focused on innovation in memory technology.

Conclusion

Ali Ghalam's contributions to the field of memory technology through his patents and work at Intel Corporation highlight his role as a leading inventor in the industry. His innovative solutions are paving the way for advancements in memory device efficiency and functionality.

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