Alexander G Carver

Title: Alexander G. Carver: Innovator in Silicon Imaging Technology

Introduction

Alexander G. Carver is a notable inventor based in North Hollywood, CA. He has made significant contributions to the field of silicon imaging technology. His innovative work focuses on enhancing the efficiency and yield of silicon devices.

Latest Patents

Carver holds a patent titled "Delta-doping at wafer level for high throughput, high yield fabrication of silicon imaging arrays." This patent describes systems and methods for producing high quantum efficiency silicon devices. The technology involves a silicon molecular beam epitaxy (MBE) process that includes a preparation chamber for cleaning silicon surfaces using an oxygen plasma. This process effectively removes impurities and employs a gaseous (dry) NH+NF room temperature oxide removal technique, leaving the silicon surface hydrogen-terminated. The methods allow for the fabrication of devices on silicon wafers up to 8 inches in diameter, utilizing delta doping.

Career Highlights

Carver is affiliated with the California Institute of Technology, where he continues to advance research in silicon technology. His work has been instrumental in improving the fabrication processes for silicon imaging arrays, contributing to the development of more efficient imaging devices.

Collaborations

Some of his notable coworkers include Todd J. Jones and Michael E. Hoenk, who have collaborated with him on various projects related to silicon technology.

Conclusion

Alexander G. Carver's innovative contributions to silicon imaging technology have paved the way for advancements in high-efficiency silicon devices. His work continues to influence the field and inspire future innovations.