The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2014
Filed:
Dec. 10, 2010
Michael E. Hoenk, Valencia, CA (US);
Shoulch Nikzad, Valencia, CA (US);
Todd J. Jones, Altadena, CA (US);
Frank Greer, Pasadena, CA (US);
Alexander G. Carver, North Hollywood, CA (US);
Michael E. Hoenk, Valencia, CA (US);
Shoulch Nikzad, Valencia, CA (US);
Todd J. Jones, Altadena, CA (US);
Frank Greer, Pasadena, CA (US);
Alexander G. Carver, North Hollywood, CA (US);
California Institute of Technology, Pasadena, CA (US);
Abstract
Systems and methods for producing high quantum efficiency silicon devices. A silicon MBE has a preparation chamber that provides for cleaning silicon surfaces using an oxygen plasma to remove impurities and a gaseous (dry) NH+NFroom temperature oxide removal process that leaves the silicon surface hydrogen terminated. Silicon wafers up to 8 inches in diameter have devices that can be fabricated using the cleaning procedures and MBE processing, including delta doping.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile