Alex Sirkis

Title: Innovations by Alex Sirkis in GaN Sensor Technology

Introduction

Alex Sirkis is a notable inventor based in Yokneam Ilit, Israel. He has made significant contributions to the field of semiconductor technology, particularly in the development of Gallium Nitride (GaN) sensors. With a total of three patents to his name, Sirkis has established himself as a key figure in advancing sensor technology.

Latest Patents

Sirkis's latest patents focus on methods for forming GaN sensors with controlled and stable threshold voltages. One of his patents describes a method that includes forming a gate dielectric layer over a GaN hetero-structure. This process involves several steps, such as etching the gate dielectric layer and the first barrier layer to create source and drain contact openings. The method also details the formation of a metal layer that extends into these openings, followed by thermal activation to enhance performance. The gate dielectric may exhibit a sloped profile, and dielectric spacers may be formed to improve the sensor's functionality.

Career Highlights

Alex Sirkis is currently employed at Tower Semiconductor Ltd., where he continues to innovate in the field of semiconductor technology. His work has been instrumental in developing advanced sensor solutions that meet the demands of modern applications. His expertise in GaN technology has positioned him as a leader in this specialized area.

Collaborations

Sirkis has collaborated with notable colleagues, including Yakov Roizin and Ruth Shima-Edelstein. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Alex Sirkis's contributions to GaN sensor technology highlight his role as a significant inventor in the semiconductor industry. His patents and collaborative efforts continue to push the boundaries of what is possible in sensor technology.