Leuven, Belgium

Alessandro Viva

This inventor holds 1 USPTO granted patent and 3 published patent applications. Top assignee: Asm IP Holding B.v.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Alessandro Viva. Retrieved from https://idiyas.com/inventor/alessandro-viva

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Alessandro Viva and Atomic Layer Deposition

Introduction

Alessandro Viva is an inventor based in Leuven, Belgium. His work includes a patent for a method of forming a material layer using atomic layer deposition (ALD). The patent record lists 1 patent and identifies ASM IP Holding B.V. as the company associated with his work.

Latest Patents

Viva’s patent, “Method of Forming a Layer by ALD,” describes forming a material layer on one or more substrates through repeated deposition cycles. Each cycle uses at least two precursor pulses, separated by purge pulses. The method allows the ratio between the process-chamber pressure during each precursor pulse and the pressure during an intervening purge pulse to be the same or different across the pulses.

Career Highlights

The disclosed method addresses process conditions in ALD, a technique used to deposit thin material layers with controlled, sequential reactions. Viva’s patent focuses on managing chamber pressure across precursor and purge steps during deposition.

Collaborations

The supplied information identifies Quentin Nikitas Nicolas Lionel Eric Tricas as Viva’s coworker. It also associates Viva’s work with ASM IP Holding B.V.

Conclusion

Alessandro Viva’s patent describes an ALD method that varies or maintains pressure ratios across precursor and purge pulses, contributing to the documented body of deposition-process inventions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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