Albert Z H Wang

Santa Clara, CA, United States of America

Albert Z H Wang

This inventor holds 6 USPTO granted patents. Top assignees: National Semiconductor Corporation, Illinois Institute of Technology. Active years: 2001-2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Albert Z H Wang. Retrieved from https://idiyas.com/inventor/albert-z-h-wang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 33.3

Average Co-Inventor Count = 2.3

ph-index = 4

Forward Citations = 196(Granted Patents)


Location History:

  • Wilmette, IL (US) (2007)
  • Santa Clara, CA (US) (2001 - 2012)

Company Filing History:


Years Active: 2001-2012

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6 patents (USPTO):Explore Patents

Title: Innovations of Albert Z H Wang

Introduction

Albert Z H Wang is a notable inventor based in Santa Clara, CA. He has made significant contributions to the field of electrostatic discharge (ESD) protection technology. With a total of 6 patents, his work has advanced the understanding and implementation of ESD protection structures.

Latest Patents

Wang's latest patents include a dual-directional electrostatic discharge protection method. This invention features a two-terminal ESD protection structure formed by an alternating arrangement of adjacent p-n-p-n-p semiconductor regions. It provides protection against both positive and negative ESD pulses. When an ESD pulse appears across the two terminals, one of the inherent n-p-n-p thyristors is triggered into a snap-back mode, forming a low impedance path to discharge the ESD current. Some embodiments of this structure have enhanced current handling capability and are formed by combining several standard cells, including corner, center, and edge cells. Another notable patent is the dual-directional electrostatic discharge protection device, which also consists of a two-terminal ESD protection structure formed by five adjacent semiconductor regions of alternating conductivity type. This device operates by triggering one of its two inherent thyristors into a snap-back mode, providing a low impedance path for discharging ESD current.

Career Highlights

Throughout his career, Wang has worked with prominent organizations such as National Semiconductor Corporation and the Illinois Institute of Technology. His experience in these institutions has contributed to his expertise in semiconductor technology and ESD protection.

Collaborations

Wang has collaborated with notable colleagues, including Chen H Tsay and Peter Deane. Their combined efforts have furthered advancements in the field of electrostatic discharge protection.

Conclusion

Albert Z H Wang's innovations in ESD protection technology have made a significant impact on the industry. His patents reflect a deep understanding of semiconductor structures and their applications in protecting electronic devices from ESD events.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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