Alan Hurst

Title: Alan Hurst: Innovator in MRAM Technology

Introduction

Alan Hurst is a notable inventor based in Anoka, MN (US), recognized for his contributions to the field of memory devices, particularly in Magnetic Random Access Memory (MRAM) technology. With a total of two patents to his name, Hurst has made significant advancements that enhance the performance and efficiency of MRAM devices.

Latest Patents

Hurst's latest patents focus on methods for fabricating a magnetic keeper for MRAM devices. One patent describes an MRAM device comprising an array of MRAM elements, where each element's bit is influenced by a magnetic field from a current flowing through a conductor. This invention includes a magnetic keeper formed adjacent to the conductor, which alters the magnetic field by concentrating it within the keeper. This concentration reduces the extent of fringe fields, allowing MRAM elements to be positioned closer together, thereby increasing the areal density of the MRAM device. The increase in magnetic field flux due to the magnetic keeper enables the MRAM device to operate with lower power consumption. Soft magnetic materials such as nickel iron, nickel iron cobalt, or cobalt iron can be utilized to form the magnetic keeper.

Another patent by Hurst outlines a method for building a magnetic keeper or flux concentrator used for writing magnetic bits on an MRAM device. Similar to the previous patent, this invention also emphasizes the importance of the magnetic keeper in enhancing the magnetic field and improving the overall efficiency of the MRAM device.

Career Highlights

Alan Hurst is currently employed at Micron Technology Incorporated, a leading company in semiconductor manufacturing. His work at Micron has allowed him to focus on innovative solutions that push the boundaries of memory technology.

Collaborations

Hurst has collaborated with notable coworkers, including William Frank Witcraft and Lonny L Berg, contributing to a dynamic team that fosters innovation in the field of MRAM technology.

Conclusion

Alan Hurst's contributions to MRAM technology through his patents and work at Micron Technology Incorporated highlight his role as a significant inventor in the field. His innovative methods for enhancing memory devices continue to pave the way for advancements in technology.