Gunma, Japan

Akio Andoo

This inventor holds 1 USPTO granted patent. Top assignee: Hitachi, Ltd.. Active years: 1993.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Akio Andoo. Retrieved from https://idiyas.com/inventor/akio-andoo

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 17(Granted Patents)


Company Filing History:


Years Active: 1993

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1 patent (USPTO):Explore Patents

Title: Akio Andoo: Innovator in Semiconductor Technology

Introduction

Akio Andoo is a prominent inventor based in Gunma, Japan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique method for manufacturing semiconductor devices.

Latest Patents

One of Akio Andoo's notable patents is titled "Method of manufacturing semiconductor device with controlled carrier." This patent describes a semiconductor device that includes a semiconductor substrate, an insulated gate field-effect transistor section, and a peripheral section that surrounds the transistor section. The invention also features a passivation layer made of organic material, enhancing the device's humidity resistance by utilizing organic resin in its packaging.

Career Highlights

Akio Andoo is associated with Hitachi, Ltd., a leading company in technology and innovation. His work at Hitachi has allowed him to explore and develop advanced semiconductor technologies. With a total of 1 patent, he has established himself as a key figure in the semiconductor industry.

Collaborations

Throughout his career, Akio Andoo has collaborated with notable colleagues, including Shigeo Ohtaka and Tetsuo Iijima. These collaborations have contributed to the advancement of semiconductor technology and innovation.

Conclusion

Akio Andoo's contributions to semiconductor technology exemplify the spirit of innovation. His work continues to influence the industry and pave the way for future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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