The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 1993
Filed:
Sep. 14, 1990
Applicant:
Inventors:
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 17 ; 437240 ; 437214 ; 437215 ; 437923 ; 437247 ;
Abstract
A semiconductor device has a semiconductor substrate, an insulated gate field-effect transistor section formed in the substrate and a peripheral section formed in the substrate and arranged to substantially surround the field-effect transistor section. A passivation layer of an organic material is provided over that part of the substrate in which the field-effect transistor section is not located. The device may be resin mold packaged for an enhanced humidity-resistance by making use of the fact tht the peripheral portion of the device is covered with organic resin.