Kanagawa, Japan

Akari Hitotsugo

This inventor holds 1 USPTO granted patent. Top assignees: Mitsubishi Gas Chemical Company, Inc., Ryoko Chemical Co., Ltd.. Active years: 2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Akari Hitotsugo. Retrieved from https://idiyas.com/inventor/akari-hitotsugo

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2016

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1 patent (USPTO):Explore Patents

Title: Akari Hitotsugo: Innovator in Wiring Substrate Technology

Introduction

Akari Hitotsugo is a notable inventor based in Kanagawa, Japan. He has made significant contributions to the field of wiring substrate technology. His innovative approach has led to the development of a unique method that enhances the manufacturing process of wiring substrates.

Latest Patents

Akari Hitotsugo holds 1 patent for his invention titled "Method of treating wiring substrate and wiring substrate manufactured by the same." This method involves a semi-additive process that improves the treatment of wiring substrates, showcasing his expertise in this specialized area.

Career Highlights

Throughout his career, Akari has worked with prominent companies such as Mitsubishi Gas Chemical Company, Inc. and Ryoko Chemical Co., Ltd. His experience in these organizations has allowed him to refine his skills and contribute to advancements in wiring substrate technology.

Collaborations

Akari has collaborated with talented individuals in his field, including Yukihide Naito and Tomoko Suzuki. Their combined efforts have fostered innovation and progress in their respective projects.

Conclusion

Akari Hitotsugo's contributions to wiring substrate technology exemplify the impact of innovative thinking in the industry. His patent and collaborations highlight his commitment to advancing technology in this field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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