This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: Intel Corporation. Active years: 2022.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2022
Title: Akanksha Mehta: Innovator in Memory Device Technology
Introduction
Akanksha Mehta is a talented inventor based in Portland, Oregon. She has made significant contributions to the field of memory device technology, particularly in reducing write disturb refresh rates. Her innovative approach has the potential to enhance performance in memory devices.
Latest Patents
Akanksha holds a patent for a technology titled "Write Disturb Refresh Rate Reduction Using Write History Buffer." This invention addresses the issue of write disturb in memory devices. By utilizing a write history buffer, her technology prevents write disturb, enabling a reduction in the required refresh rate and improving overall performance. The memory device she designed includes circuitry that spaces consecutive write commands to the same address, thereby minimizing incidences of write disturb.
Career Highlights
Akanksha is currently employed at Intel Corporation, where she continues to develop innovative solutions in memory technology. Her work focuses on enhancing the efficiency and performance of memory devices, making her a valuable asset to her team and the company.
Collaborations
Some of her coworkers include Benjamin Graniello and Rakan Maddah, who collaborate with her on various projects within the company.
Conclusion
Akanksha Mehta is a pioneering inventor whose work in memory device technology is making a significant impact. Her innovative patent demonstrates her commitment to improving performance in the field.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile