Jinan, China

Aimin Song

This inventor holds 2 USPTO granted patents. Top assignee: Shandong University. Active years: 2025-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Aimin Song. Retrieved from https://idiyas.com/inventor/aimin-song-6mx7ckou

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 50.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2025-2026

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2 patents (USPTO):Explore Patents

Title: Aimin Song: Innovator in Active Metamaterials

Introduction

Aimin Song is a prominent inventor based in Jinan, China. He has made significant contributions to the field of active metamaterials, particularly through his innovative patent involving IGZO Schottky diodes. His work is recognized for its potential applications in various technological advancements.

Latest Patents

Aimin Song holds a patent titled "Tuning method for active metamaterials using IGZO Schottky diodes." This patent describes a method that utilizes IGZO Schottky diodes to dynamically tune metamaterials. The process involves using metamaterials as Schottky electrodes and amorphous IGZO active layers to cover capacitive gap structures, forming Schottky barriers that enable dynamic tuning.

Career Highlights

Aimin Song is affiliated with Shandong University, where he continues to advance research in the field of metamaterials. His innovative approach has garnered attention in academic and industrial circles, showcasing his expertise and commitment to pushing the boundaries of technology.

Collaborations

Aimin collaborates with notable colleagues, including Yifei Zhang and Haotian Ling. Their combined efforts contribute to the ongoing research and development in the field of active metamaterials.

Conclusion

Aimin Song's work in the realm of active metamaterials exemplifies the innovative spirit of modern inventors. His contributions, particularly through his patent on IGZO Schottky diodes, highlight the importance of research in advancing technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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