Singapore, Singapore

Aik Boon Edmund Yap

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Micron Technology Incorporated. Active years: 2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Aik Boon Edmund Yap. Retrieved from https://idiyas.com/inventor/aik-boon-edmund-yap

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2024

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1 patent (USPTO):Explore Patents

Title: Aik Boon Edmund Yap: Innovator in Memory Device Technology

Introduction

Aik Boon Edmund Yap is a notable inventor based in Singapore, recognized for his contributions to memory device technology. With a focus on enhancing the performance of memory devices, he has developed innovative methods that address specific challenges in the field.

Latest Patents

Aik Boon Edmund Yap holds a patent for "Skipping pages for weak wordlines of a memory device during pre-programming." This invention describes methods, systems, and devices that allow a memory device to operate in a first mode, which involves skipping one or more pages associated with a set of wordlines. The technology is designed to improve the efficiency of memory devices by pre-programming data in a subset of pages while avoiding those that may experience performance degradation.

Career Highlights

Aik Boon Edmund Yap is currently employed at Micron Technology Incorporated, a leading company in the semiconductor industry. His work focuses on developing advanced memory solutions that enhance data storage and retrieval processes.

Collaborations

He collaborates with talented colleagues, including Cheng Cheng Ang and Chun Lei Kong, to drive innovation and improve memory device technologies.

Conclusion

Aik Boon Edmund Yap's contributions to memory device technology exemplify the impact of innovative thinking in the field. His patent reflects a significant advancement that addresses critical challenges in memory performance.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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