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Years Active: 2017
Title: The Innovations of Aidong Shen
Introduction
Aidong Shen is a notable inventor based in Rego Park, NY (US). He has made significant contributions to the field of photodetectors, particularly through his innovative work on quantum well infrared photodetectors.
Latest Patents
Aidong Shen holds a patent for "Quantum well infrared photodetectors using II-VI material systems." This patent describes a quantum well infrared photodetector (QWIP) and a method of making it. The QWIP consists of multiple epi-layers formed into periods of quantum wells, with each quantum well separated by a barrier. Both the quantum wells and barriers are made from II-VI semiconductor materials. Additionally, the patent includes designs for a multiple wavelength QWIP, which features several QWIPs stacked onto a single epitaxial structure, each responding to different wavelengths. A dual wavelength QWIP is also part of this innovation, comprising two QWIPs designed to respond at 10 µm and 3-5 µm wavelengths.
Career Highlights
Throughout his career, Aidong Shen has worked at prestigious institutions such as the City University of New York and Princeton University. His work has been instrumental in advancing the technology behind infrared photodetectors.
Collaborations
Aidong has collaborated with notable colleagues, including Arvind Ravikumar and Claire F. Gmachl. Their joint efforts have contributed to the development of cutting-edge technologies in the field.
Conclusion
Aidong Shen's innovative work in quantum well infrared photodetectors showcases his expertise and dedication to advancing technology. His contributions continue to influence the field and inspire future innovations.