The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2017
Filed:
Feb. 20, 2014
Arvind Ravikumar, Princeton, NJ (US);
Claire Gmachl, Princeton, NJ (US);
Aidong Shen, Rego Park, NY (US);
Maria Tamargo, Teaneck, NJ (US);
Arvind Ravikumar, Princeton, NJ (US);
Claire Gmachl, Princeton, NJ (US);
Aidong Shen, Rego Park, NY (US);
Maria Tamargo, Teaneck, NJ (US);
THE RESEARCH FOUNDATION OF THE CITY UNIVERSITY OF NEW YORK, New York, NY (US);
THE TRUSTEES OF PRINCETON UNIVERSITY, Princeton, NJ (US);
Abstract
A quantum well infrared photodetector (QWIP) and method of making is disclosed. The QWIP includes a plurality of epi-layers formed into multiple periods of quantum wells, each of the quantum wells being separated by a barrier, the quantum wells and barriers being formed of II-VI semiconductor materials. A multiple wavelength QWIP is also disclosed and includes a plurality of QWIPs stacked onto a single epitaxial structure, in which the different QWIPs are designed to respond at different wavelengths. A dual wavelength QWIP is also disclosed and includes two QWIPs stacked onto a single epitaxial structure, in which one QWIP is designed to respond at 10 μm and the other at 3-5 μm wavelengths.