This inventor holds 1 USPTO granted patent. Top assignee: Yonsei University. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Ahn Tuan Hoang and Low-Temperature Synthesis of Two-Dimensional Materials.
Introduction
Ahn Tuan Hoang is an inventor associated with Yonsei University in Seoul, South Korea. His patent work concerns a method for synthesizing two-dimensional materials at low temperatures.
Latest Patents
Hoang is associated with 1 patent: “Low Temperature Synthesis Method of Two Dimensional Material.” The disclosed method prepares a substrate and maintains two adjacent furnace zones at different temperatures, with the second zone kept cooler. Carrier gas, a transition metal precursor, and a chalcogenide precursor are introduced into the first zone. Chemical vapor deposition then forms a transition metal dichalcogenide on the target substrate in the second zone.
Career Highlights
The patent describes a two-zone synthesis approach that separates precursor delivery from material deposition. By using a lower temperature in the substrate zone, the method provides a controlled process for depositing a two-dimensional transition metal dichalcogenide.
Collaborations
The supplied information identifies Jong-Hyun Ahn and Beom Jin Kim as Hoang’s coworkers. The patent is associated with Yonsei University.
Conclusion
Ahn Tuan Hoang’s patent documents a low-temperature, two-zone chemical vapor deposition method for producing two-dimensional materials, reflecting his work associated with Yonsei University.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile