The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2026
Filed:
Jul. 15, 2024
Applicant:
Uif (University Industry Foundation), Yonsei University, Seoul, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/30 (2006.01); C23C 16/06 (2006.01); C23C 16/448 (2006.01); H10P 14/20 (2026.01);
U.S. Cl.
CPC ...
C23C 16/305 (2013.01); C23C 16/06 (2013.01); C23C 16/448 (2013.01); H10P 14/3436 (2026.01);
Abstract
A synthesis method of a 2D material according to the present disclosure includes preparing a substrate; maintaining a first zone of a furnace and a second zone adjacent to the first zone, in which the target substrate is disposed, at a first temperature and a second temperature which is lower than the first temperature; injecting carrier gas, a transition metal precursor, and a chalcogenide precursor into the first zone of the furnace; and depositing transition metal dichalcogenide on the target substrate in the second zone at the second temperature by the chemical vapor deposition.