Location History:
- Hopewell Junction, NY (US) (1993)
- Rochester, MN (US) (1996)
Company Filing History:
Years Active: 1993-1996
Title: The Innovative Contributions of Ahmet Bindal
Introduction
Ahmet Bindal is a notable inventor based in Hopewell Junction, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work primarily focuses on enhancing the performance and efficiency of MOSFET devices.
Latest Patents
Ahmet Bindal's latest patents include innovative designs that improve the functionality of MOSFETs. One of his patents describes a MOS channel device with counterdoping of ion implant for reduced substrate sensitivity and source/drain junction capacitance. This invention features an arsenic (As) compensated boron (B) implant in the N-channel MOSFET and a boron (B) compensated arsenic (As) implant in the P-channel MOSFET. Another significant patent involves a method of forming a thin silicon-on-insulator (SOI) layer for fully depleted field effect transistors. This method includes defining thin silicon mesas by etching a device layer down to the underlying insulator and forming a nitride bottom polish stop, ensuring that no hard material is present during the chemical-mechanical polishing step.
Career Highlights
Ahmet Bindal is currently employed at International Business Machines Corporation (IBM), where he continues to push the boundaries of semiconductor technology. His work has been instrumental in developing advanced solutions that address the challenges faced in the industry.
Collaborations
Ahmet has collaborated with several talented individuals, including James E Currie and Carol Galli. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas.
Conclusion
Ahmet Bindal's contributions to the field of semiconductor technology are noteworthy and impactful. His innovative patents and collaborations reflect his commitment to advancing technology and improving device performance.