The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 1996
Filed:
Sep. 29, 1995
Applicant:
Inventor:
Ahmet Bindal, Rochester, MN (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257335 ; 257345 ; 257376 ; 257402 ; 257403 ; 257590 ; 257657 ; 257917 ;
Abstract
An N-channel and P-channel MOSFET include counterdoping of a threshold voltage (V.sub.T) ion implant for reducing substrate sensitivity and source/drain junction capacitance. An arsenic (As) compensated boron (B) implant is provided in the N-channel MOSFET. A boron (B) compensated arsenic (As) implant is provided in the P-channel MOSFET.