The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 1993
Filed:
Dec. 16, 1992
Ahmet Bindal, Hopewell Junction, NY (US);
James E Currie, Washington, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of forming a SOI integrated circuit includes defining thin silicon mesas by wet etching a device layer having the <100> orientation down to the underlying insulator so that the (111) crystal planes control the lateral etching, forming a nitride bottom polish stop in the bottom of the apertures by a low temperature CVD process, with nitride sidewalls on the (111) planes of the silicon mesas being susceptible to easy removal, so that no hard material is present during a chemical-mechanical polishing step to thin the device layer down to less than 1000 .ANG., and filling the apertures with a temporary layer of polysilicon to provide mechanical support to the edges of the device layer during the polishing operation.