Company Filing History:
Years Active: 2009
Title: Innovations of Agus Setiawan in GaN Substrate Production.
Introduction
Agus Setiawan is a notable inventor based in Sendai, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the production of Gallium Nitride (GaN) substrates. His innovative approach aims to enhance the quality and reduce the cost of GaN substrates, which are essential for various electronic applications.
Latest Patents
Agus Setiawan holds a patent for a process titled "Process for producing GaN substrate." This patent describes a method for producing an inexpensive, large, high-quality GaN substrate. The process involves forming a magnesium oxide (MgO) buffer layer on a high-quality substrate, generating a zinc oxide (ZnO) layer on the MgO buffer layer while performing polarity control, growing a GaN layer on the ZnO layer while maintaining polarity control, and finally melting the ZnO layer to produce the GaN substrate. This innovative method is a significant advancement in the field.
Career Highlights
Agus Setiawan is currently employed at Tohoku Techno Arch Co., Ltd., where he continues to work on cutting-edge technologies in semiconductor manufacturing. His expertise and innovative mindset have positioned him as a valuable asset to his company and the industry at large.
Collaborations
Agus has collaborated with talented individuals such as Takafumi Yao and Takuma Suzuki. These collaborations have fostered a creative environment that encourages the development of new ideas and technologies.
Conclusion
Agus Setiawan's contributions to the production of GaN substrates exemplify the spirit of innovation in the semiconductor industry. His work not only enhances the quality of materials used in electronics but also contributes to making them more affordable. His ongoing efforts at Tohoku Techno Arch Co., Ltd. continue to inspire advancements in technology.