The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2009
Filed:
Mar. 19, 2004
Applicants:
Takafumi Yao, Tsukuba, JP;
Takuma Suzuki, Sendai, JP;
Hang-ju Ko, Sendai, JP;
Agus Setiawan, Sendai, JP;
Inventors:
Takafumi Yao, Tsukuba, JP;
Takuma Suzuki, Sendai, JP;
Hang-ju Ko, Sendai, JP;
Agus Setiawan, Sendai, JP;
Assignee:
Tohoku Techno Arch Co., Ltd., , JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/18 (2006.01);
U.S. Cl.
CPC ...
Abstract
A process for producing an inexpensive large high-quality GaN substrate which comprises forming a MgO buffer layer on a high-quality substrate, generating a ZnO layer on the MgO buffer layer while performing polarity control, growing a GaN layer on the ZnO layer while performing polarity control, and melting the ZnO layer, thereby producing a GaN substrate.