Agnes Yeung

Title: Agnes Yeung: Innovator in High Voltage Integrated Circuits

Introduction

Agnes Yeung is a notable inventor based in Saratoga, California. She has made significant contributions to the field of electrical engineering, particularly in the development of high voltage integrated circuits. Her innovative work has led to the granting of a patent that showcases her expertise and creativity.

Latest Patents

Agnes Yeung holds a patent for a "Lightly-doped drain MOSFET with improved breakdown characteristics." This invention involves a high voltage integrated circuit (IC) that features a passivation structure designed to shield the underlying circuit from the electrical effects of charge on the passivation structure. In one embodiment, the passivation structure includes a silicon-rich nitride layer that is in electrical contact with the underlying circuit elements. This layer is highly resistive, allowing only a negligible current between elements while ensuring that charge on the surface flows into the IC without significantly altering the electric fields in the underlying circuit elements. Another embodiment of her invention includes a passivation structure with multiple layers, which effectively shields the IC from charge buildup.

Career Highlights

Agnes Yeung is currently employed at Silinconix, Inc., where she continues to push the boundaries of innovation in her field. Her work has not only advanced technology but has also contributed to the understanding of high voltage integrated circuits.

Collaborations

Agnes has collaborated with notable colleagues, including Richard Kent Williams and Michael E Cornell. These partnerships have fostered an environment of innovation and creativity, leading to advancements in their respective fields.

Conclusion

Agnes Yeung is a pioneering inventor whose work in high voltage integrated circuits has made a significant impact on the industry. Her patent reflects her dedication to innovation and her ability to solve complex engineering challenges.