Adrian N Robinson

Title: The Innovative Mind of Adrian N Robinson

Introduction

Adrian N Robinson is a notable inventor based in Haymarket, VA (US). He has made significant contributions to the field of memory technology, holding a total of 3 patents. His work focuses on advanced memory systems that leverage carbon nanotube technology.

Latest Patents

One of Robinson's latest patents is titled "High density stacked CNT memory cube arrays with memory selectors." This invention describes a three-dimensional (3-D) memory stack that includes multiple vertically stacked memory devices. Each memory device consists of one or more memory cells formed on a conductive material, along with selector elements that connect the memory cells to respective bit lines without using diodes or transistors.

Another significant patent is for a "Two terminal nanotube switch, memory array incorporating the same and method of making." This device features a first conductive terminal and a second conductive terminal, with an insulating spacer that maintains their spatial relationship. The device incorporates a nanotube article that overlaps both terminals and includes a stimulus circuit capable of altering the resistance between the terminals.

Career Highlights

Adrian N Robinson is currently employed at Lockheed Martin Corporation, where he continues to innovate in the field of memory technology. His work has the potential to revolutionize data storage and processing capabilities.

Collaborations

Robinson has collaborated with notable coworkers such as Jonathan Wesley Ward and Garo Jacques Derderian, contributing to the advancement of their shared projects.

Conclusion

Adrian N Robinson's innovative contributions to memory technology highlight his expertise and dedication to advancing the field. His patents reflect a commitment to developing cutting-edge solutions that could shape the future of data storage.