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For the Inventor, By the Inventor

Fremont, CA, United States of America

Abhishek Shendre

This inventor holds 7 USPTO granted patents and 6 published patent applications. Top assignee: D2s, Inc.. Active years: 2022-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Abhishek Shendre. Retrieved from https://idiyas.com/inventor/abhishek-shendre

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 7 

% Patents Active = 100.0

Average Co-Inventor Count = 3.8

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:

goldMedal7 out of 141 
 
D2s, Inc.
 patents

Years Active: 2022-2026

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7 patents (USPTO):Explore Patents
1. 12688998 - Method and system for determining a charged particle beam exposure for a local pattern density (2026-07-21),
2. 12572082 - Geometric loading effect correction for lithography (2026-03-10),
3. 12243712 - Method and system for determining a charged particle beam exposure for a local pattern density (2025-03-04),
4. 11886166 - Method and system of reducing charged particle beam write time (2024-01-30),
5. 11756765 - Method and system for determining a charged particle beam exposure for a local pattern density (2023-09-12),
6. 11604451 - Method and system of reducing charged particle beam write time (2023-03-14),
7. 11263496 - Methods and systems to classify features in electronic designs (2022-03-01),

Title: Abhishek Shendre: Innovator in Charged Particle Beam Technology

Introduction

Abhishek Shendre is a prominent inventor based in Fremont, California. He has made significant contributions to the field of charged particle beam technology, holding a total of five patents. His innovative work focuses on methods and systems that enhance the efficiency and effectiveness of charged particle beam lithography.

Latest Patents

Among his latest patents is a method and system for determining a charged particle beam exposure for a local pattern density. This invention involves determining a local pattern density for an area based on an original set of exposure information. It also includes calculating a pre-proximity effect correction maximum dose for the local pattern density, which is essential for achieving desired results in charged particle beam applications. Another notable patent is a method and system for reducing charged particle beam write time. This method enhances the exposure of patterns on surfaces by calculating backscatter and adjusting dosages accordingly, thereby improving the overall efficiency of the lithography process.

Career Highlights

Abhishek Shendre has established himself as a key figure in his field through his innovative patents and contributions to D2S, Inc. His work has been instrumental in advancing the capabilities of charged particle beam systems, making them more effective for various applications.

Collaborations

He has collaborated with notable professionals in the industry, including Akira Fujimura and Harold Robert Zable. These collaborations have further enriched his work and contributed to the development of cutting-edge technologies in charged particle beam lithography.

Conclusion

Abhishek Shendre's contributions to charged particle beam technology exemplify his innovative spirit and dedication to advancing the field. His patents reflect a deep understanding of the complexities involved in lithography, and his work continues to influence the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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