Sunnyvale, CA, United States of America

Abhijeet S Bagal

This inventor holds 4 USPTO granted patents and 3 published patent applications. Top assignees: Applied Materials, Inc., Apple Inc.. Active years: 2024-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Abhijeet S Bagal. Retrieved from https://idiyas.com/inventor/abhijeet-s-bagal

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 4 

% Patents Active = 50.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2024-2026

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4 patents (USPTO):Explore Patents

Title: Innovations by Abhijeet S Bagal

Introduction

Abhijeet S Bagal is a notable inventor based in Sunnyvale, CA (US). He has made significant contributions to the field of semiconductor processing, holding 4 patents that showcase his expertise and innovative spirit. His work focuses on advanced methods that enhance the efficiency and effectiveness of semiconductor manufacturing.

Latest Patents

Abhijeet's latest patents include groundbreaking processes such as carbon gap fill processes. These exemplary semiconductor processing methods involve providing a carbon-containing precursor to a processing region of a semiconductor processing chamber. A substrate is disposed within this processing region, which may define one or more recessed features. The methods include forming a plasma of the carbon-containing precursor and a second precursor, performed at a plasma power of greater than or about 500 W. This innovative approach allows for the deposition of a carbon-containing material on the substrate, extending within the recessed features.

Another significant patent focuses on selective carbon deposition on top and bottom surfaces of semiconductor substrates. This method includes providing a substrate to a reaction chamber, where the substrate features trenches with a top and bottom surface. A deposition gas, comprising a carbon-containing gas and a nitrogen-containing gas, flows into a plasma excitation region of the reaction chamber. The resulting deposition plasma has an electron temperature of less than or about 4 eV. This method enables the deposition of a carbon-containing layer on both surfaces of the substrate trenches, achieving a top surface-to-bottom surface thickness ratio of greater than or about 3:1.

Career Highlights

Abhijeet S Bagal is currently employed at Applied Materials, Inc., a leading company in the semiconductor industry. His work at Applied Materials has positioned him as a key player in the development of innovative semiconductor processing techniques. His contributions have not only advanced the technology but have also paved the way for future innovations in the field.

Collaborations

Abhijeet has collaborated with talented coworkers such as Qian Fu and Kuan-Ting Liu. These collaborations have fostered a creative environment that encourages the exchange of ideas and the development of cutting-edge technologies.

Conclusion

Abhijeet S Bagal's contributions to semiconductor processing through his innovative patents highlight his role as a significant inventor in the industry. His work continues to influence advancements in semiconductor technology, showcasing the importance of innovation in this critical field

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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