The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 21, 2026

Filed:

May. 30, 2023
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Zhiren Luo, San Jose, CA (US);

Jeong Hwan Kim, San Jose, CA (US);

Qian Fu, Pleasanton, CA (US);

Abhijeet S. Bagal, Sunnyvale, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 50/28 (2026.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H10P 50/283 (2026.01); H01J 37/32449 (2013.01); H01J 37/32816 (2013.01); H01J 2237/182 (2013.01); H01J 2237/334 (2013.01);
Abstract

Methods of semiconductor processing may include providing a hydrogen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed on a substrate support within the processing region. A layer of silicon-and-nitrogen-containing material may be disposed on the substrate. The methods may include forming plasma effluents of the hydrogen-containing precursor. The methods may include contacting the layer of silicon-and-nitrogen-containing material with plasma effluents of the hydrogen-containing precursor. The contacting may etch a portion of the layer of silicon-and-nitrogen-containing material.


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