Tashkent, Uzbekistan

Abdisaidov Ilyos

This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignees: Institute of Ion-Plasma and Laser Technologies, Oci Company Ltd.. Active years: 2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Abdisaidov Ilyos. Retrieved from https://idiyas.com/inventor/abdisaidov-ilyos

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

 

Average Co-Inventor Count = 12.0

ph-index = 1


Company Filing History:


Years Active: 2016

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1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Abdisaidov Ilyos

Introduction

Abdisaidov Ilyos is a notable inventor based in Tashkent, Uzbekistan. He has made significant contributions to the field of semiconductor technology through his innovative methods and research. His work focuses on the preparation of high-purity monosilane, which is essential for various applications in the semiconductor industry.

Latest Patents

Ilyos holds a patent for a method of preparing monosilane using trialkoxysilane. This method is particularly noteworthy as it allows for the economical production of monosilane with high purity and yield. The resulting monosilane is useful for the composition of thin semiconductor structures and multipurpose high-purity polycrystalline silicon.

Career Highlights

Throughout his career, Abdisaidov Ilyos has worked with reputable organizations, including Oci Company Ltd. and the Institute of Ion-Plasma and Laser Technologies. His experience in these institutions has contributed to his expertise in the field of semiconductor technology and materials science.

Collaborations

Ilyos has collaborated with esteemed colleagues such as Taek Joong Kim and Yong Il Kim. These partnerships have further enhanced his research and development efforts in the field.

Conclusion

Abdisaidov Ilyos is a prominent inventor whose work in the preparation of monosilane has significant implications for the semiconductor industry. His innovative methods and collaborations reflect his commitment to advancing technology in this vital field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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