The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2016
Filed:
Oct. 02, 2013
Oci Company Ltd., Seoul, KR;
Institute of Ion-plasma and Laser Technologies, Tashkent, UZ;
Taek Joong Kim, Seoul, KR;
Yong Il Kim, Incheon, KR;
Kyung Yeol Kim, Seoul, KR;
Deok Yun Kim, Seongnam-si, KR;
Ashurov Khatam, Tashkent, UZ;
Salikhov Shavkat, Tashkent, UZ;
Rotshteyn Vladimir, Tashkent, UZ;
Ashurova Khekayat, Tashkent, UZ;
Kurbanov Aziz, Tashkent, UZ;
Abdisaidov Ilyos, Tashkent, UZ;
Azizov Sultan, Tashkent, UZ;
Ashurov Rustam, Tashkent, UZ;
OCI COMPANY LTD., Seoul, KR;
INSTITUTE OF ION-PLASMA AND LASER TECHNOLOGIES, Tashkent, UZ;
Abstract
Provided is a method for preparing monosilane, more particularly a method for economically preparing monosilane, which is useful for the composition of a thin semiconductor structure and multipurpose high-purity polycrystalline silicon, by preparing monosilane with high purity and high yield using trialkoxysilane.