Tashkent, Uzbekistan

Ashurov Rustam


 

Average Co-Inventor Count = 12.0

ph-index = 1


Company Filing History:


Years Active: 2016

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1 patent (USPTO):Explore Patents

Title: Ashurov Rustam: Innovator in Monosilane Production

Introduction

Ashurov Rustam is a notable inventor based in Tashkent, Uzbekistan. He has made significant contributions to the field of semiconductor technology through his innovative methods. His work focuses on the economical preparation of monosilane, a crucial component in the production of high-purity polycrystalline silicon.

Latest Patents

Rustam holds a patent for a method for preparing monosilane using trialkoxysilane. This method is particularly valuable as it allows for the economical production of monosilane with high purity and yield. The invention is essential for the composition of thin semiconductor structures, which are vital in various electronic applications.

Career Highlights

Throughout his career, Ashurov Rustam has worked with reputable organizations, including Oci Company Ltd. and the Institute of Ion-Plasma and Laser Technologies. His experience in these institutions has contributed to his expertise in the field of semiconductor technology.

Collaborations

Rustam has collaborated with notable professionals in his field, including Taek Joong Kim and Yong Il Kim. These collaborations have further enhanced his research and development efforts in the area of monosilane production.

Conclusion

Ashurov Rustam's innovative approach to monosilane production showcases his dedication to advancing semiconductor technology. His contributions are significant in the pursuit of high-purity materials essential for modern electronics.

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