This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignees: Institute of Ion-Plasma and Laser Technologies, Oci Company Ltd.. Active years: 2016.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
1 out of 1 
1 out of 40 Years Active: 2016
Title: Ashurov Rustam: Innovator in Monosilane Production
Introduction
Ashurov Rustam is a notable inventor based in Tashkent, Uzbekistan. He has made significant contributions to the field of semiconductor technology through his innovative methods. His work focuses on the economical preparation of monosilane, a crucial component in the production of high-purity polycrystalline silicon.
Latest Patents
Rustam holds a patent for a method for preparing monosilane using trialkoxysilane. This method is particularly valuable as it allows for the economical production of monosilane with high purity and yield. The invention is essential for the composition of thin semiconductor structures, which are vital in various electronic applications.
Career Highlights
Throughout his career, Ashurov Rustam has worked with reputable organizations, including Oci Company Ltd. and the Institute of Ion-Plasma and Laser Technologies. His experience in these institutions has contributed to his expertise in the field of semiconductor technology.
Collaborations
Rustam has collaborated with notable professionals in his field, including Taek Joong Kim and Yong Il Kim. These collaborations have further enhanced his research and development efforts in the area of monosilane production.
Conclusion
Ashurov Rustam's innovative approach to monosilane production showcases his dedication to advancing semiconductor technology. His contributions are significant in the pursuit of high-purity materials essential for modern electronics.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile