Company Filing History:
Years Active: 2014-2023
Title: Abbas Torabi: Innovator in Gallium Nitride Technology
Introduction
Abbas Torabi is a prominent inventor based in North Andover, MA (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of Gallium Nitride (GaN) devices. With a total of 3 patents to his name, Torabi's work has advanced the efficiency and performance of high electron mobility transistors.
Latest Patents
One of Torabi's latest patents focuses on Gallium nitride high electron mobility transistors (HEMTs) that feature reduced current collapse and enhanced power added efficiency. This innovative HEMT structure includes a GaN buffer layer on the substrate, a doped GaN layer in direct contact with the buffer layer, and an unintentionally doped GaN channel layer that contains a two-dimensional electron gas (2DEG) channel. Notably, one of the dopants used is beryllium, while another is carbon.
Another significant patent involves doped barrier layers in epitaxial group III nitrides. This semiconductor structure consists of a Group III-N buffer layer and a Group III-N barrier layer that form a junction, producing a two-dimensional electron gas (2DEG) channel. The barrier layer has a varying dopant concentration, with the lower region closest to the junction being void of intentionally introduced dopants.
Career Highlights
Abbas Torabi is currently employed at Raytheon Company, where he continues to push the boundaries of semiconductor technology. His work has been instrumental in enhancing the performance of electronic devices that rely on GaN technology.
Collaborations
Torabi has collaborated with notable colleagues, including Brian D Schultz and Eduardo M Chumbes. These partnerships have fostered innovation and contributed to the advancement of their shared field.
Conclusion
Abbas Torabi's contributions to Gallium Nitride technology and his innovative patents have positioned him as a key figure in the semiconductor industry. His work continues to influence the development of high-performance electronic devices.