The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2016
Filed:
Jun. 16, 2015
Raytheon Company, Waltham, MA (US);
Brian D. Schultz, Lexington, MA (US);
Abbas Torabi, North Andover, MA (US);
Eduardo M. Chumbes, Andover, MA (US);
Shahed Reza, Boxborough, MA (US);
William E. Hoke, Wayland, MA (US);
RAYTHEON COMPANY, Waltham, MA (US);
Abstract
A semiconductor structure having a Group III-N buffer layer and a Group III-N barrier layer in direct contact to form a junction between the Group III-V buffer layer the Group III-N barrier layer producing a two dimensional electron gas (2DEG) channel, the Group III-N barrier layer having a varying dopant concentration. The lower region of the Group III-N barrier layer closest to the junction is void of intentionally introduced dopant and a region above the lower region having intentionally introduced, predetermined dopant with a predetermined doping concentration above 1×10atoms per cm.