Raytheon Company

Abbas Torabi

Brian D Schultz

William E Hoke

Eduardo M Chumbes

Shahed Reza

John Logan

A High Electron Mobility Transistor structure having: a GaN buffer layer disposed on the substrate; a doped GaN layer disposed on, and in direct contact with, the buffer layer, such doped GaN layer being doped with more than one different dopants; an unintentionally doped (UID) GaN channel layer on, and in direct contact with, the doped GaN layer, such UID GaN channel layer having a 2DEG channel therein; a barrier layer on, and in direct contact with, the UID GaN channel layer. One of the dopants is beryllium and another one of the dopants is carbon.

Gallium nitride high electron mobility transistors (HEMTs) having reduced current collapse and power added efficiency enhancement

A semiconductor structure having a Group III-N buffer layer and a Group III-N barrier layer in direct contact to form a junction between the Group III-V buffer layer the Group III-N barrier layer producing a two dimensional electron gas (2DEG) channel, the Group III-N barrier layer having a varying dopant concentration. The lower region of the Group III-N barrier layer closest to the junction is void of intentionally introduced dopant and a region above the lower region having intentionally introduced, predetermined dopant with a predetermined doping concentration above 1&#xd7;10atoms per cm.

Doped barrier layers in epitaxial group III nitrides

A detector structure having a sensor for detecting energy impinging on the structure in the infrared and/or optical frequency band; an electronics section disposed behind the sensor for processing electrical signal produced by the sensor in response to the sensor detecting the infrared and/or optical energy; and an electrically conductive layer for inhibiting electromagnetic energy outside of the visible and infrared portions of the spectrum, such electrically conductive layer being disposed between impinging energy and the electronics section, such layer having a transmissivity greater than 90 percent in the visible and infrared portions of the spectrum and being reflective and/or dissipative to portions of the impinging energy outside of the visible and infrared portions of the spectrum. In one embodiment an electrically conductive layer having a substantially constant absorptivity to electromagnetic energy within the visible and infrared portions of the spectrum. In one embodiment, the layer is graphene.

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North Andover, MA, United States of America

Abbas Torabi