Boise, ID, United States of America

Aaron P Thurber

USPTO Granted Patents = 1 

Average Co-Inventor Count = 8.0

ph-index = 1


Company Filing History:


Years Active: 2025

where 'Filed Patents' based on already Granted Patents

1 patent (USPTO):

Title: The Innovations of Aaron P. Thurber

Introduction

Aaron P. Thurber is a notable inventor based in Boise, Idaho. He has made significant contributions to the field of memory technology, particularly through his innovative patent related to memory arrays. His work is instrumental in advancing the capabilities of memory storage solutions.

Latest Patents

Thurber holds a patent for "Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells." This patent describes a method for forming memory block regions that include a vertical stack of alternating insulative and conductive tiers. The design features channel-material strings that extend through these tiers, with conductive tiers containing void spaces that enhance the functionality of the memory array. The patent also details the formation of conductive molybdenum-containing metal material within these void spaces, which plays a crucial role in the overall structure and performance of the memory cells.

Career Highlights

Aaron P. Thurber is associated with Micron Technology Incorporated, a leading company in the semiconductor industry. His work at Micron has positioned him as a key player in the development of advanced memory technologies. His innovative approaches have contributed to the company's reputation for excellence in memory solutions.

Collaborations

Thurber has collaborated with notable colleagues such as Jordan D. Greenlee and David Ross Economy. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas within the field.

Conclusion

Aaron P. Thurber's contributions to memory technology through his patent and work at Micron Technology Incorporated highlight his role as an influential inventor. His innovative methods and collaborative efforts continue to shape the future of memory storage solutions.

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