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For the Inventor, By the Inventor

Hsinchu, Taiwan

Exvelliance Mos Corporation


USPTO Granted Patents = 1

Forward Citations = 0

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2 inventors (with patents filed for the assignee):

goldMedal Chu-Kuang Liu (1 out of 16 patents)

silverMedal Hung-Kun Yang (1 out of 4 patents)


1 patent:

1. 10720506 - Method of manufacturing gate structure for gallium nitride high electron mobility transistor (2020-07-21),
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USPTO Data Jan 1 1976 - Sep 29 2026

1 Patents

#744 in Hsinchu

#6,125 in Taiwan

Hsinchu, TW
Hsinchu, Taiwan

Exvelliance Mos Corporation

Forward Citations = 0

2 inventors:

goldMedal Chu-Kuang Liu (1 out of 16 patents)

silverMedal Hung-Kun Yang (1 out of 4 patents)

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