The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2020
Filed:
Mar. 22, 2019
Excelliance Mos Corporation, Hsinchu County, TW;
Chu-Kuang Liu, Hsinchu County, TW;
Hung-Kun Yang, Hsinchu County, TW;
Exvelliance MOS Corporation, Hsinchu County, TW;
Abstract
A method of manufacturing a gate structure for gallium nitride (GaN) high electron mobility transistor (HEMT) includes orderly forming a channel layer, a barrier layer, a doped GaN layer, an undoped GaN layer, and an insulating layer on a substrate, and then removing a portion of the insulating layer to form a trench. A gate metal layer is formed on the substrate to cover the insulating layer and the trench, and then a mask layer aligned with the trench is formed on the gate metal layer, wherein the mask layer partially overlaps the insulating layer. By using the mask layer as an etching mask, the exposed gate metal layer and the underlying insulating layer, the undoped GaN layer and the doped GaN layer are removed, and then the mask layer is removed.