Ap Memory Technology (Hangzhou) Limited Co.

Calculating rank

USPTO Granted Patents = 3

Forward Citations = 0

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7 inventors (with patents filed for the assignee):

Masaru Haraguchi (2 out of 29 patents)

Yoshitaka Fujiishi (2 out of 10 patents)

Wenliang Chen (1 out of 18 patents)

4. Xuan Zhang (1 out of 2 patents)

5. Po Han Chen (1 out of 1 patent)

6. Keng Lone Wong (1 out of 1 patent)

7. Alessandro Minzoni (1 out of 1 patent)

3 patents: Sort by Forward Citations

1. 12317521 - Capacitor device and manufacturing method therefor (2025-05-27),

2. 11757432 - Device and method of correcting duty cycle (2023-09-12),

3. 11038012 - Capacitor device and manufacturing method therefor (2021-06-15),

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USPTO Data Jan 1 1976 - Oct 27 2026

3 Patents

#222 in Hangzhou

#8,379 in China

Hangzhou, China

Ap Memory Technology (Hangzhou) Limited Co.

Forward Citations = 0

7 inventors:

Masaru Haraguchi (2 out of 29 patents)

Yoshitaka Fujiishi (2 out of 10 patents)

Wenliang Chen (1 out of 18 patents)

4. Xuan Zhang (1 out of 2 patents)

5. Po Han Chen (1 out of 1 patent)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Ap Memory Technology (Hangzhou) Limited Co.. Retrieved from https://idiyas.com/company/ap-memory-technology-hangzhou-company

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]