The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2021
Filed:
Apr. 28, 2017
Zentel Japan Corporation, Tokyo, JP;
Ap Memory Technology (Hangzhou) Limited Co., Hangzhou, CN;
Masaru Haraguchi, Tokyo, JP;
Yoshitaka Fujiishi, Tokyo, JP;
AP Memory Technology Corp., Zhubei, TW;
AP Memory Technology (Hangzhou) Limited Co., Hangzhou, CN;
Abstract
In the present invention, lower electrodes () are disposed at a period din an X direction and at a period din a Y direction. Upper electrodes () are disposed so as to be shifted by half the length of the period (d) in the X direction with respect to the lower electrodes (), and are disposed so as to be shifted by half the length of the period (d) in the Y direction with respect to the lower electrodes (). Each pair of a lower electrode () and an upper electrode (), which face each other and capacitively couple with each other, form a capacitor cell (C). Cell terminals () are disposed at the period (d) in the X direction, disposed at the period (d) in the Y direction, and respectively electrically connected to the lower electrodes () and the upper electrodes (). The cell terminals () are disposed so as to be shifted by half the length of the period (d) in the X direction with respect to the cell terminals (), and are disposed so as to be shifted by half the length of the period (d) in the Y direction with respect to the cell terminals ().