Centurion Patentors as of November 11, 2025

Wenhao Zhang
Disney Streaming – Senior Principal Engineer.
Patent №: 12469262 – Subjective quality assessment tool for image/video artifacts.

Subjects rate the overall artifact level and mark affected regions. Their responses are combined to produce opinion and region scores, which are used to generate training data for improving artifact detection or correction.

Ming Li
Vice President of ZTE Corporation.
Patent №: 12470500 – Network device and method for switching, routing and/or gatewaying data.

A communication network includes a central processor, ingress and egress ports, and multiple co-processors for tasks like frame normalization, queuing, filtering, and traffic shaping. The central processor manages these components to enable parallel or pipelined data processing between ports.

Brian Joseph Greene
LTD Device Manager at Intel Corporation.
Patent №: 12471354 – Dipole threshold voltage tuning for high voltage transistor stacks.

Integrated circuits include high and low voltage transistor stack structures. Both may share the same gate metal, while a metal oxide around the high-voltage channels adjusts the dipole properties of the gate insulator.

Robert Jan Visser
Applied Materials Vice President, CTO office at Applied Materials. SID Fellow.
Patent №: 12471502 – High quality quantum computer components.

Methods for fabricating quantum computing components include removing native oxide from a silicon substrate, transferring it under vacuum, and depositing an aluminum layer to form an oxygen-free interface between the aluminum and silicon.

Chung-Hao Tsai
Dr. Tsai is a Taiwanese researcher in electrical engineering. He earned his B.S. from National Sun Yat-sen University in 2006 and a Ph.D. in Communication Engineering from National Taiwan University in 2012.
Patent №: 12469808 – Semiconductor package and manufacturing method thereof.

A semiconductor package includes stacked first and second dies with interconnects on both sides of the second die’s substrate. The second interconnect lies between the first and third interconnect structures.