Senior Architect at Apple.
Patent №: 12120738 (October 15, 2024) – Multi-user-RTS and CTS frames for a sub-channel selective transmission station.
An electronic device, like an access point, sends a multi-user (MU) RTS frame over a primary channel to a second device and over a secondary channel to a third device. Afterward, it receives an MU-clear-to-send (CTS) frame on a third channel, which may be equal to or a subset of the secondary channel.
3GPP RAN4 lead and Sr. Manager at Apple.
Patent №: 12120737 (October 15, 2024) – Channel access scheme enhancements.
This disclosure describes systems and methods for enhancing channel access in unlicensed higher frequency bands. A wireless device performs channel access detection (CAD) measurements at one interval and calculates a CAD metric at another interval.
Patent №: 12120697 (October 15, 2024) – Radio resource management signal reception. A user equipment (UE) receives an RRM signal via a first reception path (either an antenna port or antenna panel) and a non-RRM signal via a second path, both multiplexed onto the same symbol. The RRM signal includes a reference signal for RRM and is part of a non-zero power (NZP) interference measurement.
Patent №: 12120573 (October 15, 2024) – Cell reselection and measurement in a high-speed mode in wireless communications. In one example, timing for synchronization signal processing is based on the device’s beam sweeping capability, and the signals are processed to complete cell reselection. In another example, location data is used to look up a database of cell identifiers, which are then used to perform the reselection procedure.
Patent №: 12120564 (October 15, 2024) – RACH configuration in L1/L2 mobility. A user equipment (UE) receives a downlink (DL) TCI list from a first TRP with beam, RACH occasion (RO), and bandwidth part (BWP) info. After a handover command, the UE uses the specified DL TCI to determine RACH info for a second TRP and performs random access based on that information.
Patent №: 12120543 (October 15, 2024) – Techniques in multiple measurement gaps in new radio (NR). This disclosure describes methods, devices, and systems for configuring multiple measurement gaps (MGs) in New Radio (NR) networks. It details how user equipment (UE) capabilities for supporting multiple MGs are communicated with an access node (AN) to enable efficient MG configuration. Other variations and claims may be included.
Patent №: 12119895 (October 15, 2024) – Methods and apparatus for multi-TRP UL transmission. The network receives beam measurements from a user equipment (UE) for multiple UL transmission beams and, based on these measurements, configures the UE for multi-TRP UL TDMed repetition using the beams. Additionally, coordination between the network and the UE improves UL TDMed repetition when the UE switches between antenna panels.
Dr. Lin received the B.S. degree in physics from National Taiwan University, Taipei, Taiwan, R.O.C., in 1996, and the M.S. and Ph.D. degrees in electrical engineering and computer science from Massachusetts Institute of Technology, Cambridge, in 2000 and 2003, respectively.
In July 2003, he joined the IBM T. J. Watson Research Center, Yorktown Heights, NY as a Postdoctoral Fellow, where he is currently involved in the transport study of CN transistors.
Patent №: 12119402 (October 15, 2024) – Semiconductor devices with ferroelectric layer and methods of manufacturing thereof. A semiconductor device is described, featuring a substrate with a metal layer on it. A seed layer is placed on the metal layer, followed by a ferroelectric gate layer. A channel layer is then formed over the ferroelectric gate layer. The seed layer enhances the orthorhombic phase fraction of the ferroelectric gate layer.
Patent №: 12119390 (October 15, 2024) – Gate spacer structures and methods for forming the same. This disclosure describes a semiconductor device with a substrate, a gate stack (gate dielectric and gate electrode), and a multi-spacer structure. The structure includes a first spacer on the gate stack, a second spacer with a tapered portion on the substrate, and a third spacer over the second spacer and substrate. A source/drain region in the substrate is adjacent to the third spacer and the second spacer.
Patent №: 12119389 (October 15, 2024) – Semiconductor device with reduced trap defect and method of forming the same. A method for manufacturing a semiconductor device includes forming fins on a substrate, creating a dummy gate and gate spacer, and forming lightly-doped source/drain (LDD) regions. After a high-temperature treatment to repair defects, source/drain regions are added, the dummy gate is replaced, and an inter-layer dielectric (ILD) is deposited.
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